inchange semiconductor product specification silicon npn power transistors 2SC2979 description ? ? with to-220c package ?high v cbo ? fast switching speed. applications ? for high voltage ,high speed and high power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a i b base current 1.5 a p c collector dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC2979 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; r be = ?t ,l=100mh 800 v v (br)ebo base-emitter breakdown voltage i e =10ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =0.75a; i b =0.15a 1.0 v v besat base-emitter saturation voltage i c =0.75a; i b =0.15a 1.5 v i cbo collector cut-off current v cb =750v ;i e =0 100 | a i ceo collector cut-off current v ce =650v; r be = ?t 100 | a h fe-1 dc current gain i c =0.3a ; v ce =5v 15 h fe-2 dc current gain i c =1.5a ; v ce =5v 7 switching times t on turn-on time 1.0 | s t stg storage time 3.0 | s t f fall time v cc ?? 250v; i c =1.5a i b1 =0.3a;i b2 =-0.75a 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC2979 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC2979
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